Coupled-mode analysis of travelling-wave MESFETs

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Abstract
The properties of travelling-wave MESFETs are calculated by the coupled-mode theory, including all the important properties of wave propagation; namely, the coupling between the gate and the drain electrode, the attenuation of the waves along the drain and the gate line and in the channel and the reflection of the waves at the four ends of the transistor. By this complete analysis, the travelling-wave MESFETs is optimized with regard to its electrode length transverse to the electron drift direction in the channel and with regard to its terminations.

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