Deposition of ferroelectric PZT thin films by planar multi-target sputtering
- 1 March 1992
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 127 (1) , 137-142
- https://doi.org/10.1080/00150199208223360
Abstract
A planar multi-target sputtering system was used to deposit ferroelectric lead zirconate titanate (PZT) films. At substrate temperatures of about 450°C “in-situ” deposition of single phase perovskite PZT was obtained. By investigation with SEM and TEM films exhibited a columnar structure with crystallites of about 200 nm in size. The permittivity of the films varied from 450-600. The films exhibited hysteresis loops, remanent polarization of 15-20 μC/cm2 and coercive field strength of 70-85 kV/cm.Keywords
This publication has 5 references indexed in Scilit:
- Ferroelectronic ram memory family for critical data storageFerroelectrics, 1990
- Characterization of Pb(Zr,Ti)O3 thin films deposited from multielement metal targetsJournal of Applied Physics, 1988
- Preparation and Properties of (Pb, La)TiO3 Epitaxial Thin Films by Multi-Target SputteringJapanese Journal of Applied Physics, 1985
- Some electrical and optical properties of ferroelectric lead-zirconate–lead-titanate thin filmsJournal of Applied Physics, 1977
- Rochelle Salt as a DielectricPhysical Review B, 1930