The fabrication and characterisation of ion-sensitive field-effect transistors with a silicon dioxide gate
- 1 October 1986
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 19 (10) , 1951-1956
- https://doi.org/10.1088/0022-3727/19/10/020
Abstract
No abstract availableKeywords
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