Radiation resistance of high-efficiency InGaP/GaAs tandem solar cells
- 15 July 1999
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 58 (3) , 265-276
- https://doi.org/10.1016/s0927-0248(99)00003-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Minority-carrier injection-enhanced annealing of radiation damage to InGaP solar cellsApplied Physics Letters, 1997
- Superior radiation-resistant properties of InGaP/GaAs tandem solar cellsApplied Physics Letters, 1997
- Over 30% efficient InGaP/GaAs tandem solar cellsApplied Physics Letters, 1997
- 29.5%-efficient GaInP/GaAs tandem solar cellsApplied Physics Letters, 1994
- A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cellApplied Physics Letters, 1990
- Numerical analysis for radiation-resistant GaAs heteroface solar cell structuresJournal of Applied Physics, 1985
- Recombination-enhanced annealing of the E1 and E2 defect levels in 1-MeV-electron–irradiated n-GaAsJournal of Applied Physics, 1976