Ohmic contacts to n-type GaAs using high-temperature rapid thermal annealing for self-aligned processing
- 27 April 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (17) , 1179-1181
- https://doi.org/10.1063/1.97903
Abstract
We have formed Ge/Pd/W/Au and Ge/Mo/W/Au ohmic contacts to n‐type GaAs by using a high‐temperature rapid thermal annealing technique. The annealing schedule is compatible with that used for ion implantation activation, and the contact resistances (mid 10−6 Ω cm2) achieved are slightly higher than those for the commonly used Ni/Ge/Au alloyed contact. The Ge/Pd/W/Au contact maintains a good surface morphology and can be used as the implantation mask in self‐aligned processes for devices such as heterojunction bipolar transistors.Keywords
This publication has 11 references indexed in Scilit:
- High-performance AlGaAs/GaAs MODFET'S with improved ohmic contactsIEEE Transactions on Electron Devices, 1986
- Low resistance Pd/Ge/Au and Ge/Pd/Au ohmic contacts to n-type GaAsApplied Physics Letters, 1986
- GaAs/(GaAl)As heterojunction bipolar transistors using a self-aligned substitutional emitter processIEEE Electron Device Letters, 1986
- Rapid Thermal Annealing in GaAs IC ProcessingJournal of the Electrochemical Society, 1985
- Au/TiN/WSi-gate self-aligned GaAs MESFETs using rapid thermal annealing methodElectronics Letters, 1985
- Shallow beryllium implantation in GaAs annealed by rapid thermal annealingApplied Physics Letters, 1985
- Characteristics of sub-half-micrometre-gate self-aligned GaAs FET by ion implantationElectronics Letters, 1984
- Rapid thermal annealing of Be, Si, and Zn implanted GaAs using an ultrahigh power argon arc lampApplied Physics Letters, 1983
- Ohmic contacts to III–V compound semiconductors: A review of fabrication techniquesSolid-State Electronics, 1983
- Self-align implantation for n + -layer technology (SAINT) for high-speed GaAs ICsElectronics Letters, 1982