Electrical properties of direct deposited piezoelectric thick film formed by gas deposition method annealing effect of the deposited films
- 1 June 1999
- journal article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 231 (1) , 285-292
- https://doi.org/10.1080/00150199908014545
Abstract
Ultrafine particles jetting with the velocities of several hundreds m/s are accumulated on the metal and ceramic substrate via impact adhesion. Recently, the application of this phenomenon as a thick film formation method has been investigated for micro electro mechanical systems (MEMS) and micro devices. The gas deposition method is one of the thick film formation method based on impact adhesion of ultrafine particle. In this paper, the optimum annealing condition for the deposited Pb(Zr,Ti)O3 film with thickness over 10 μ m is reported. For the deposited films after annealing at 600°C for 1 hour, the remanent polarization of 20 μ C/ cm2 and the coercive filed of 44.7kV/cm was obtained.Keywords
This publication has 5 references indexed in Scilit:
- Application of Gas Jet Deposition Method to Piezoelectric Thick Film Miniature ActuatorJapanese Journal of Applied Physics, 1998
- Jet molding system for realization of three-dimensional micro-structuresSensors and Actuators A: Physical, 1998
- Hypersonic plasma particle deposition of nanostructured silicon and silicon carbideJournal of Aerosol Science, 1998
- Preparation of Piezoelectric Thick Films using a Jet Printing SystemJapanese Journal of Applied Physics, 1997
- Deposition of Ultra Fine Particles Using a Gas JetJapanese Journal of Applied Physics, 1984