Defect generation in silicon dioxide from soft x-ray synchrotron radiation
- 1 August 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (3) , 1145-1151
- https://doi.org/10.1063/1.341876
Abstract
Generation of fixed positive charge, neutral electron traps, and fixed negative charge in SiO2 due to exposure to monochromatic x-ray radiation in the photon energy range from 300 to 1000 eV in a synchrotron source is reported upon. At a constant exposure level of 2×107 rads, the number of defects generated is approximately independent of x-ray photon energy. The generated defects, independent of x-ray radiation energy, show normal post-metal annealing characteristics.This publication has 15 references indexed in Scilit:
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