Electroluminescence in Liquid-Phase Epitaxial GaSb Diodes
- 1 March 1971
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (3) , 1057-1062
- https://doi.org/10.1063/1.1660142
Abstract
Electroluminescence in GaSb liquid-phase epitaxial diodes has been studied. Optical and electrical measurements were done between 65° and 300°K. Two emission bands are observed, which are both due to transitions between the conduction band and different acceptor levels. The peak photon energy of band I is stationary with applied voltage and is due to a thermal injection mechanism. The low-energy band II shifts with applied voltage and is described by theories of photon-assisted tunneling. It is demonstrated that for both emission bands the intensities and peak photon energies are directly related to the applied voltage.This publication has 10 references indexed in Scilit:
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