ODMR investigation of the PGaantisite defect in GaP
- 10 August 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (22) , L723-L728
- https://doi.org/10.1088/0022-3719/15/22/006
Abstract
ODMR investigations of as-grown and electron-irradiated GaP confirm that the PGa antisite defect behaves, in its singly ionised state PGa4+, as an electron trap in direct competition with band edge recombination processes. A broad photoluminescence band peaking at 1.1 eV shows triplet (S=1) ODMR which is associated with the two-electron PGa3+ state of the antisite. The triplet excited state has (111) symmetry and is formed by spin-dependent electron transfer from shallow donors to the PGa4+ antisite.Keywords
This publication has 7 references indexed in Scilit:
- The deep double donor PGain GaPJournal of Physics C: Solid State Physics, 1981
- Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductorsAdvances in Physics, 1981
- Electron paramagnetic resonance of electron-irradiated GaPPhysical Review B, 1981
- Optically detected electron resonance in phosphorus-doped ZnTeSolid State Communications, 1981
- ESR detection of antisite lattice defects in GaP, CdSiP2, and ZnGeP2Applied Physics Letters, 1976
- Nonstoichiometry and nonradiative recombination in GaPJournal of Electronic Materials, 1975
- Pair Spectra and "Edge" Emission in Gallium PhosphidePhysical Review B, 1964