Shape transition of coherent three-dimensional (In,Ga)As islands on GaAs(100)
- 17 December 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (25) , 4219-4221
- https://doi.org/10.1063/1.1428107
Abstract
The shape transition of coherent three-dimensional (3D) islands is observed experimentally in the (In,Ga)As/GaAs(100) material system. In the molecular-beam epitaxy of a 1.8-nm-thick In0.35Ga0.65As single layer, we find that the shape of the coherent 3D islands transforms from round to elongated when increasing the growth temperature. A quantitative agreement of our experimental data with the theoretical work of Tersoff and Tromp is achieved.Keywords
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