Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100)
- 26 February 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (9) , 1297-1299
- https://doi.org/10.1063/1.1352047
Abstract
Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs multilayer structures. The structural properties of the quantum wires are characterized by atomic force microscopy, x-ray diffractometry, and transmission electron microscopy. The lateral carrier confinement in the quantum wires is confirmed by linear polarization dependent photoluminescence (PL) and magneto-PL measurements.Keywords
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