Optimisation of furnace oxidation of Si with respect to negative bias stress instability
- 31 August 1993
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 22 (1-4) , 47-50
- https://doi.org/10.1016/0167-9317(93)90128-r
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Mechanism of negative-bias-temperature instabilityJournal of Applied Physics, 1991
- Electron and hole traps in SiO/sub 2/ films thermally grown on Si substrates in ultra-dry oxygenIEEE Transactions on Electron Devices, 1988
- Electron trapping in SiO2 at 295 and 77 °KJournal of Applied Physics, 1979