Origin of n≃2 injection current in AlxGa1−xAs heterojunctions
- 1 October 1977
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (7) , 454-456
- https://doi.org/10.1063/1.89739
Abstract
We show that the n≃2 current in AlxGa1−xAs heterojunctions is due to surface recombination. The rate of recombination at etched surfaces is evaluated in two photoluminescence experiments. Both of these experiments provide evidence that the rate of surface recombination is proportional to exp(eV/2kT) and has the correct magnitude to account for the measured I‐V curves. The n≃2 behavior is shown to be a necessary consequence of maintaining equality between surface and depletion layer charge.Keywords
This publication has 11 references indexed in Scilit:
- The origin of large dark spots in AlxGa1−xAs-GaAs heterostructure photoluminescenceApplied Physics Letters, 1977
- Self-absorption effects on the radiative lifetime in GaAs-GaAlAs double heterostructuresJournal of Applied Physics, 1977
- Derivative measurements of the current-voltage characteristics of double-heterostructure injection lasersIEEE Journal of Quantum Electronics, 1976
- Effect of surface treatment on surface recombination velocity and diode leakage current in GaPJournal of Vacuum Science and Technology, 1976
- Concentration-dependent absorption and spontaneous emission of heavily doped GaAsJournal of Applied Physics, 1976
- A study of deep levels in GaAs by capacitance spectroscopyJournal of Electronic Materials, 1975
- Surface effects of GaAs0·6P0·4 light emitting diodesSolid-State Electronics, 1973
- Electroluminescent shifting-peak spectra in GaAs with uniform excitationJournal of Applied Physics, 1973
- Detailed light-current-voltage analysis of GaP electroluminescent diodesJournal of Applied Physics, 1973
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957