Low standby leakage current power amplifier module made with junction PHEMT technology
- 1 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10647775,p. 301-304
- https://doi.org/10.1109/gaas.2003.1252417
Abstract
A true enhancement-mode junction pseudomorphic HEMT (JPHEMT) with a high threshold voltage (V/sub th/) Of +0.5 V was developed for single-supply power amplifiers. The novel JPHEMT exhibits an extremely low standby leakage current. The leakage current at 25/spl deg/C is 2.2/spl times/10/sup -10/ A/mm and even at 85/spl deg/C is 8.6/spl times/10/sup -9/ A/mm. It is suggested that the leakage current is the lowest among reported enhancement-mode FETs. Moreover, the novel JPHEMT exhibits a high turn-on voltage (V/sub F/) of 1.3 V at 1 mA/mm, which is 100 mV higher than that of a conventional JPHEMT. The PA module performance for 1.95 GHz W-CDMA systems, under conditions of V/sub DS/ of 3.5 V and an adjacent channel leakage power ratio (ACLR) of -37 dBc, demonstrated an output power (P/sub out/) of 26.5 dBm, an associated gain (Gain) of 26 dB and a power added efficiency (PAE) of 47%. The standby leakage current at gate-to-source voltage (V/sub GS/) of 0 V was less than 1 /spl mu/A even at 85/spl deg/C. This high RF-performance, with extremely low leakage current results, indicate that the novel JPHEMT has single-supply amplifier capability.Keywords
This publication has 9 references indexed in Scilit:
- A buried p-gate heterojunction field effect transistor for a power amplifier of digital wireless communication systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- PAE enhancement by intermodulation cancellation in an InGaP/GaAs HBT two-stage power amplifier MMIC for W-CDMAPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A linearized power amplifier MMIC for 3.5 V battery operated wide-band CDMA handsetsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Performance Comparison of HBTs and Quasi E-mode PHEMTs for Single Supply High Efficiency Power AmplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2001
- Enhancement-mode power heterojunction FET utilizing Al/sub 0.5/Ga/sub 0.5/As barrier layer with negligible operation gate current for digital cellular phonesIEEE Transactions on Electron Devices, 2001
- High efficiency, wide dynamic range variable gain and power amplifier MMICs for wideband CDMA handsetsIEEE Microwave and Wireless Components Letters, 2001
- Application of enhancement mode FET technology for wireless subscriber transmit/receive circuitsIEEE Journal of Solid-State Circuits, 2000
- High efficiency power amplifier module with novel enhancement-mode heterojunction FETs for wide-band CDMA handsetsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2000
- 44% efficiency operation of power heterojunction FET at near pinch-off for 3.5 V wide-band CDMA cellular phonesSolid-State Electronics, 1999