Etching submicrometer trenches by using the Bosch process and its application to the fabrication of antireflection structures
- 14 January 2005
- journal article
- Published by IOP Publishing in Journal of Micromechanics and Microengineering
- Vol. 15 (3) , 580-585
- https://doi.org/10.1088/0960-1317/15/3/020
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- High-Q single crystal silicon HARPSS capacitive beam resonators with self-aligned sub-100-nm transduction gapsJournal of Microelectromechanical Systems, 2003
- Subwavelength Antireflection Gratings for Light Emitting Diodes and Photodiodes Fabricated by Fast Atom Beam EtchingJapanese Journal of Applied Physics, 2002
- Silicon micromachining using a high-density plasma sourceJournal of Physics D: Applied Physics, 2001
- Anisotropic silicon trenches 300–500 μm deep employing time multiplexed deep etching (TMDE)Sensors and Actuators A: Physical, 2001
- 100 nm period silicon antireflection structures fabricated using a porous alumina membrane maskApplied Physics Letters, 2001
- High aspect-ratio combined poly and single-crystal silicon (HARPSS) MEMS technologyJournal of Microelectromechanical Systems, 2000
- Broadband Antireflection Gratings for Glass Substrates Fabricated by Fast Atom Beam EtchingJapanese Journal of Applied Physics, 2000
- High aspect ratio SiO2 etching with high resist selectivity improved by addition of organosilane to tetrafluoroethyl trifluoromethyl etherJournal of Vacuum Science & Technology A, 2000
- Reactive ion etching of silicon stencil masks in the presence of an axial magnetic fieldJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Antireflection effect in ultrahigh spatial-frequency holographic relief gratingsApplied Optics, 1987