Gate-drain breakdown effects upon the large signal performance of GaAs MESFETs

Publisher Website

4 December 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/mwsym.1990.99583

Abstract

No abstract available

Keywords

This publication has 5 references indexed in Scilit:

A large-signal, analytic model for the GaAs MESFET
IEEE Transactions on Microwave Theory and Techniques, 1988
Power-limiting breakdown effects in GaAs MESFET's
IEEE Transactions on Electron Devices, 1981
Light emission of GaAs power MESFETs under RF drive
IEEE Electron Device Letters, 1980
Light emission and burnout characteristics of GaAs power MESFET's
IEEE Transactions on Electron Devices, 1978
Power GaAs MESFET with a High Drain-Source Breakdown Voltage
IEEE Transactions on Microwave Theory and Techniques, 1976