Galvanomagnetic Properties of p‐Hg1−xCdxTe
- 1 February 1988
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 145 (2) , 637-648
- https://doi.org/10.1002/pssb.2221450230
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- On the thermodynamic instability of n-type HgCdTe, and on acceptor levels, transport properties, and liftime of p-type HgCdTePublished by Springer Nature ,2008
- Variable magnetic field Hall effect measurements and analyses of high purity, Hg vacancy (p-type) HgCdTeJournal of Vacuum Science & Technology A, 1986
- Electrical properties of shallow levels in p-type HgCdTeJournal of Applied Physics, 1986
- Status of point defects in HgCdTeJournal of Vacuum Science & Technology A, 1985
- The behavior of doped Hg1−xCdxTe epitaxial layers grown from Hg-rich meltsJournal of Crystal Growth, 1984
- Electrical properties of narrow gap low carrier concentration p-Hg1−xCdxTePhysics Letters A, 1982
- Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: I . Defect Structure of Undoped and Copper DopedJournal of the Electrochemical Society, 1981
- The approximation of the Fermi-Dirac integral (η)Physics Letters A, 1978
- Electrical and far-infrared optical properties of p-type Hg1−xCdxTeJournal of Applied Physics, 1976
- Carrier freeze-out and acceptor energies in p-type Hg1−xCdxTeJournal of Physics and Chemistry of Solids, 1972