Electrical properties of shallow levels in p-type HgCdTe
- 15 February 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (4) , 1205-1211
- https://doi.org/10.1063/1.336506
Abstract
Electrical measurements of gold-doped and undoped p-type Hg1−xCdxTe with x≂0.22 are reported and two models based on two shallow acceptor levels for the analysis of the Hall data are developed. One model assumes two independent acceptors and the other assumes one divalent acceptor. The models yield ionization energies of 12.5±2 and 2–5 meV. The concentration of the compensating donors is of the order of the hole concentration. Arguments are given in order to assign these levels to established point defects.This publication has 19 references indexed in Scilit:
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