Optical properties of GaInAs/InP multi-quantum wells grown by low-pressure MOVPE

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1 March 1990

journal article
Published by IOP Publishing in Semiconductor Science and Technology

Vol. 5 (3) , 222-228
https://doi.org/10.1088/0268-1242/5/3/007

Abstract

No abstract available

Keywords

This publication has 24 references indexed in Scilit:

Excitonic transitions in lattice-matched $\frac{{Ga}_{1 - x} {In}_{x} As}{InP}$ quantum wells
Physical Review B, 1988
Differential spectroscopy of GaAs- ${Ga}_{1 - x}$ A $l_{x}$ As quantum wells: An unambiguous identification of light-hole and heavy-hole states
Physical Review B, 1987
InGaAs-InP multiple quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition
Applied Physics Letters, 1987
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High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy
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Applied Physics Letters, 1986
Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy
Applied Physics Letters, 1986
Optical reflectance in GaAs/AlGaAs quantum wells
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GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy
Applied Physics Letters, 1985