Optical studies of excitons in Ga0.47In0.53As/InP multiple quantum wells

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Abstract
We report optical absorption and photoluminescence measurements of excitons in Ga0.47In0.53As/InP multiple quantum wells grown by metalorganic chemical vapor deposition. At 4 K the luminescence linewidth for n=1 heavy‐hole excitons is measured to be 7 meV for a 30‐period structure with wells of width 154 Å. The absorption spectrum at low temperature shows four peaks which we assign to confined heavy‐hole excitons. A theoretical calculation of the energies of these states indicates that the ratio of the conduction‐band to valence‐band energy discontinuities is 45:55.