Resonant tunnelling between X-levels in a GaAs/AlAs/GaAs/AlAs/GaAs device above 13 kbar
- 30 September 1990
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 75 (9) , 697-702
- https://doi.org/10.1016/0038-1098(90)90229-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- High-pressure studies of resonant tunnelling in a graded parameter superlattice and in double barrier structures of GaAs/AlAsSemiconductor Science and Technology, 1989
- Inelastic tunneling in AlAs-GaAs-AlAs heterostructuresApplied Physics Letters, 1988
- Large room-temperature effects from resonant tunneling through AlAs barriersApplied Physics Letters, 1986
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985