High-pressure studies of resonant tunnelling in a graded parameter superlattice and in double barrier structures of GaAs/AlAs
- 1 September 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (9) , 754-764
- https://doi.org/10.1088/0268-1242/4/9/009
Abstract
No abstract availableKeywords
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