Indirect gap resonant tunneling in GaAs/AlAs
- 31 October 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 64 (3) , 283-286
- https://doi.org/10.1016/0038-1098(87)90965-3
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Evidence for the role of the indirect-gap electron states in tunnelling through thin AlAs barriersSemiconductor Science and Technology, 1987
- Optical properties of narrow high quality GaAs/AlGaAs quantum wells grown by MOVPESuperlattices and Microstructures, 1986
- Indirect band-gap tunnelling through a (100) GaAs/AlAs/GaAs heterostructureSemiconductor Science and Technology, 1986
- Tunneling through indirect-gap semiconductor barriersPhysical Review B, 1986
- Scattering matrix theory of transport in heterostructuresSemiconductor Science and Technology, 1986
- The eigenvalues of very narrow quantum wellsSemiconductor Science and Technology, 1986
- Low dark current GaAs/AlAs graded-parameter superlattice PIN photodetectorElectronics Letters, 1986
- Room Temperature Observation of Differential Negative Resistance in an AlAs/GaAs/AlAs Resonant Tunneling DiodeJapanese Journal of Applied Physics, 1985
- Band mixing in semiconductor superlatticesPhysical Review B, 1985
- Resonant tunneling in GaAs/AlAs heterostructures grown by metalorganic chemical vapor depositionApplied Physics Letters, 1985