Resonant tunneling in GaAs/AlAs heterostructures grown by metalorganic chemical vapor deposition
- 1 February 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (3) , 285-287
- https://doi.org/10.1063/1.95660
Abstract
We report the first observations of resonant tunneling in electronic transport perpendicular to two AlAs layers separated by a GaAs quantum well in GaAs/AlAs heterostructures grown by metalorganic chemical vapor deposition. Resonant tunneling can be observed as inflections in the I-V curves at room temperature. These inflections become more pronounced as the temperature is reduced, until negative differential resistance regions become visible for temperatures below 260 K. At low temperatures, the I-V curves not only reveal two large negative resistance regions corresponding to the first energy level in the GaAs quantum well but also a structure which shows evidence of resonant tunneling through the second and possibly the third energy states in the well. Second derivative (d2I/dV2) measurements confirm the existence of the resonances seen in the I-V curves.Keywords
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