Low-temperature photoluminescence from CdTe grown by hot-wall epitaxy on GaAs
- 18 September 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (12) , 1220-1222
- https://doi.org/10.1063/1.101660
Abstract
The low-temperature near-band-edge photoluminescence of thick (d≊36 μm) (100)CdTe epilayers grown on (100)GaAs substrates is investigated. Besides a dominating bound exciton emission, evidence for free-exciton emission (n=1 and 2) and two electron transitions (TETs) of donor-bound excitons is found. The defect involved in the TET is most likely a gallium-related donor. This is concluded from the TET line wavelength adopting recent bulk CdTe TET data. A new emission line at 781.4 nm (1586.7 meV) is observed. It is tentatively assigned to a TET of a free exciton.Keywords
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