Epitaxial films of semiconducting FeSi2 on (001) silicon
- 21 May 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (21) , 2126-2128
- https://doi.org/10.1063/1.103235
Abstract
Epitaxial thin films of the semiconducting transition metal silicide, beta‐FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2(100)/Si(001), with the azimuthal orientation being FeSi2[010]‖‖Si〈110〉. This heteroepitaxial relationship has a common unit mesh of 59 Å2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.Keywords
This publication has 7 references indexed in Scilit:
- Semiconducting silicide-silicon heterojunction elaboration by solid phase epitaxyApplied Physics Letters, 1989
- The influence of steps on the epitaxial growth of iron-silicide on Si(001)Surface Science, 1989
- A clarification of the index of refraction of beta-iron disilicideJournal of Applied Physics, 1988
- Si-Beam Radiation Cleaning in Molecular-Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Transition-metal silicides lattice-matched to siliconJournal of Applied Physics, 1985
- Lattice match: An application to heteroepitaxyJournal of Applied Physics, 1984
- Electrical Investigation of the Semiconductor‐to‐Metal Transition in FeSi2Physica Status Solidi (b), 1969