Semiconducting silicide-silicon heterojunction elaboration by solid phase epitaxy
- 16 October 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (16) , 1671-1673
- https://doi.org/10.1063/1.102313
Abstract
Semiconducting βFeSi2 has been successfully grown on a Si (111) substrate. It has been proven that under ultrahigh vacuum conditions, the solid phase epitaxy temperature can be lowered to ∼800 K, where only the βFeSi2 phase is stabilized. The disilicide formation was monitored in situ by various surface‐sensitive techniques such as low‐energy electron diffraction, Auger electron spectroscopy, and ultraviolet photoelectron spectroscopy. The epitaxial relationships were ascertained by transmission electron diffraction and microscopy including high‐resolution cross‐sectional image. The results show the epitaxy of βFeSi2 (110) and (101) planes parallel to the Si (111) plane. The disilicide‐silicon heterojunction displays an atomically abrupt interface.Keywords
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