Minority-Carrier Lifetime in Heavily Doped GaAs:C
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (1S) , 495-497
- https://doi.org/10.1143/jjap.32.495
Abstract
Electron lifetimes at 295 K and 5 K are measured by time-resolved photoluminescence in the picosecond and subpicosecond regime in GaAs:C epitaxial layers with hole concentrations from p 0=5×1017 to 4×1020 cm-3. The recombination is more efficient than the calculated one using the recombination coefficients of intrinsic GaAs. An enhanced, temperature independent Auger coefficient of (2±1)×10-29 cm6 s-1 is fitted to the measured lifetimes.Keywords
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