Annealing effects on heavily carbon-doped GaAs
- 6 July 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (1) , 87-89
- https://doi.org/10.1063/1.107622
Abstract
The hole concentrations and lattice mismatch with the GaAs substrate of heavily carbon‐doped epilayers (4.7×1019 and 9.8×1019 cm−3) were increased and the mobilities were decreased as compared with the as‐grown samples by rapid thermal annealing silicon nitride capped samples at temperatures from 500 to 900 °C. However, for the more heavily doped sample, the hole concentration, mobility, and lattice mismatch decreased with increasing annealing temperature for annealing temperatures higher than 700 °C, but the hole concentration and lattice mismatch were still larger than those of the as‐grown samples. Secondary ion mass spectroscopy results showed that annealing produced no change in the C concentration or distribution, but the hydrogen concentration decreased. Cross‐sectional transmission electron microscopy indicated that no mismatch dislocations formed at the interface.Keywords
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