p-type doping limit of carbon in organometallic vapor phase epitaxial growth of GaAs using carbon tetrachloride
- 26 November 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (22) , 2348-2350
- https://doi.org/10.1063/1.103889
Abstract
The doping limit of carbon in GaAs grown by organometallic vapor phase epitaxy (OMVPE) using carbon tetrachloride (CCl4) as a p‐type dopant source has been investigated by variation of the V/III ratio, growth temperature, and CCl4 flow rate. Lower V/III ratios, lower growth temperatures, and higher CCl4 flow rates generally yielded higher hole concentrations. Hole concentrations as high as 1020 cm−3 were achieved. Attempts to achieve higher hole concentrations via higher CCl4 flow rates were limited by inhibition of growth and morphology degradation. Majority‐carrier hole mobilities of carbon‐doped GaAs were more than 50% greater than that of zinc‐doped GaAs for comparable hole concentrations obtained in previous work. Nonalloyed contacts to this material resulted in contact resistivities of 4×10−7 Ω cm2.Keywords
This publication has 9 references indexed in Scilit:
- Carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant sourceApplied Physics Letters, 1990
- Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxyApplied Physics Letters, 1989
- Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachlorideApplied Physics Letters, 1989
- Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filamentApplied Physics Letters, 1988
- Characterization of p-type GaAs heavily doped with carbon grown by metalorganic molecular-beam epitaxyJournal of Applied Physics, 1988
- Controlled carbon doping of GaAs by metalorganic vapor phase epitaxyApplied Physics Letters, 1988
- Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxyJournal of Applied Physics, 1988
- Abrupt p-type doping profile of carbon atomic layer doped GaAs grown by flow-rate modulation epitaxyApplied Physics Letters, 1987
- Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga sourceJournal of Applied Physics, 1984