Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy
- 1 May 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (9) , 4485-4493
- https://doi.org/10.1063/1.340143
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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