Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride
- 8 May 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (19) , 1905-1907
- https://doi.org/10.1063/1.101237
Abstract
A mixture of 500 ppm CCl4 in H2 has been used to grow heavily doped p-type GaAs by low-pressure metalorganic chemical vapor deposition with TMGa and AsH3 as the group III and V sources, respectively. Carbon acceptor concentrations between 1×1016 and 1×1019 cm−3 were obtained. In addition, abrupt carbon-doping profiles were achieved with no noticeable memory effects. Carrier concentration was studied as a function of CCl4 flow, V/III ratio, growth temperature, and growth rate using electrochemical capacitance-voltage profiling. Carbon incorporation was found to depend on CCl4 flow, V/III ratio, and growth temperature. Carbon incorporation had no dependence on the growth rate.Keywords
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