Strain relaxation and compensation due to annealing in heavily carbon-doped GaAs
- 14 October 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (16) , 2001-2003
- https://doi.org/10.1063/1.106167
Abstract
Heavily C-doped GaAs grown by atmospheric pressure metalorganic vapor phase epitaxy using CCl4 as the C-dopant source has been annealed to study the stability of C acceptors at very high doping levels (p=1018–1020 cm−3). In layers with initial hole densities p≳6×1019 cm−3, 5 min anneals at temperatures ranging from 700 to 850 °C under arsine overpressure caused a significant reduction in the hole density, lattice contraction and photoluminescence intensity, and a smaller reduction in the mobility. For lower doped material, annealing has little effect on the as-grown properties. These changes in the material properties indicate that a compensating recombination center is formed during annealing. Possible compensation mechanisms which explain partially the annealing effects in very heavily C-doped GaAs are analyzed. The results of this study show that there is an upper limit on the hole concentration of p≳6×1019 cm−3 in annealed GaAs:C.Keywords
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