Simple Method of Calculating Phonon-Assisted Auger Recombination Rate in Direct-Gap Semiconductors

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Abstract
A simple but approximate method is developed for calculating the phonon-assisted Auger recombination rate indirect-gap semiconductors, whose analysis is rigorously based on the Green's function formalism. The method is especially useful for analyzing loss mechanisms in a semiconductor laser which is made of a nondoped or a moderately doped layer. The usefulness of the method is demonstrated though the rigorous and the approximate calculations for typical materials GaAs, InP, GaSb and InAs. The condition, under which the early theory based on the second-order perturbation treatment is useful, shows up through a characteristic function. A brief discussion is also given of experiments.