Unified theory of the impurity and phonon scattering effects on Auger recombination in semiconductors
- 15 April 1982
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 25 (8) , 5390-5414
- https://doi.org/10.1103/physrevb.25.5390
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Auger recombination in GaAs and GaSbPhysical Review B, 1977
- Phonon-assisted auger recombination in semiconductorsPhysica Status Solidi (a), 1977
- Phonon-assisted Auger recombination in germaniumPhysica Status Solidi (a), 1976
- A formalism for the indirect Auger effect. IProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1976
- Effect of electron-hole interaction on the Auger recombination process in a semiconductorJournal of Applied Physics, 1975
- Auger recombination in germaniumPhysica Status Solidi (a), 1974
- Radiative and Auger processes in semiconductorsJournal of Luminescence, 1973
- Band-to-band auger recombination in indirect gap semiconductorsPhysica Status Solidi (a), 1971
- Non‐Radiative Transitions in SemiconductorsPhysica Status Solidi (b), 1970
- Auger effect in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959