Fabrication of AlGaN/GaN double‐insulator metal–oxide–semiconductor high‐electron‐mobility transistors using SiO₂ and SiN as gate insulators

This publication has 11 references indexed in Scilit:

• Studies on electron beam evaporated ZrO₂/AlGaN/GaN metal–oxide–semiconductor high‐electron‐mobility transistors
  Physica Status Solidi (a), 2005
• Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride
  Applied Physics Letters, 2004
• Submicron gate Si₃N₄/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors
  IEEE Electron Device Letters, 2003
• Photo-CVD SiO/sub 2/ layers on AlGaN and AlGaN-GaN MOSHFET
  IEEE Transactions on Electron Devices, 2003
• Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors
  Applied Physics Letters, 2003
• AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation
  Applied Physics Letters, 2003
• Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC
  Applied Physics Letters, 2002
• Maximum current in nitride-based heterostructure field-effect transistors
  Applied Physics Letters, 2002
• Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors
  Applied Physics Letters, 2002
• AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
  IEEE Electron Device Letters, 2000