Studies on electron beam evaporated ZrO2/AlGaN/GaN metal–oxide–semiconductor high‐electron‐mobility transistors
- 13 January 2005
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 202 (2)
- https://doi.org/10.1002/pssa.200409084
Abstract
No abstract availableKeywords
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