Low-frequency noise in AlGaN/GaN MOS-HFETs
- 3 February 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (3) , 268-270
- https://doi.org/10.1049/el:20000171
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Low-frequency noise in AlGaN/GaN heterostructure field effect transistorsIEEE Electron Device Letters, 1998
- 1/f noise sourcesIEEE Transactions on Electron Devices, 1994