Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 47 (8) , 1413-1417
- https://doi.org/10.1109/22.780388
Abstract
We report a detailed investigation of flicker noise in novel GaN/AlGaN heterostructure field-effect transistors (GaN HFET). Low values of noise found in these devices (i.e., the Hooge parameter is on the order of 10 ) open up the possibility for applications in communication systems. We have examined the scaling of the noise spectral density with the device dimensions in order to optimize their performance. It was also found that the slop of the noise density spectrum is in the 1.0-1.3 range for all devices and decreases with the decreasing (i.e., more negative) gate bias. The results are important for low-noise electronic technologies requiring a low phase-noise level.Keywords
This publication has 11 references indexed in Scilit:
- Flicker noise in GaN/Al/sub 0.15/Ga/sub 0.85/N doped channel heterostructure field effect transistorsIEEE Electron Device Letters, 1998
- High performance AlGaN/GaN HEMT with improved OhmiccontactsElectronics Letters, 1998
- AlGaN/GaN high electron mobility field effect transistors with low 1/f noiseApplied Physics Letters, 1998
- Low-frequency noise in AlGaN/GaN heterostructure field effect transistorsIEEE Electron Device Letters, 1998
- Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperaturesIEEE Transactions on Electron Devices, 1994
- 1/f noise in MODFETs at low drain biasIEEE Transactions on Electron Devices, 1990
- Spectral dependence of noise on gate bias in n-MOSFETSSolid-State Electronics, 1987
- Experimental studies on 1/f noiseReports on Progress in Physics, 1981
- 1/f; noise model for MOSTs biased in nonohmic regionSolid-State Electronics, 1980
- Model for 1/f; noise in MOS transistors biased in the linear regionSolid-State Electronics, 1980