Low-frequency noise in AlGaN/GaN heterostructure field effect transistors
- 1 July 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 19 (7) , 222-224
- https://doi.org/10.1109/55.701423
Abstract
We report low-frequency noise characteristics of doped-channel GaN/AlGaN heterostructure field-effect transistors grown on sapphire substrates. In the frequency range 1 Hz-100 kHz the observed noise is of the 1/f character. The Hooge constant is of the order of 10/sup -2/ and is linearly proportional to the channel width. The noise originates in the fluctuation of carrier number in the channel due to relatively high density of defects at the GaN/AlGaN heterointerface.Keywords
This publication has 10 references indexed in Scilit:
- High performance and large area flip-chip bonded AlGaN/GaN MODFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High performance 0.25 μm gate-length doped-channel AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-temperature performance of AlGaN/GaN HFETs on SiC substratesIEEE Electron Device Letters, 1997
- Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistorsApplied Physics Letters, 1996
- 1/f noise in MODFETs at low drain biasIEEE Transactions on Electron Devices, 1990
- Parasitic MESFET in (Al, Ga) As/GaAs modulation doped FET's and MODFET characterizationIEEE Transactions on Electron Devices, 1984
- 1/f noise in HEMT-type GaAs FETs at low drain biasSolid-State Electronics, 1983
- 1/f; noise model for MOSTs biased in nonohmic regionSolid-State Electronics, 1980
- 1/f noisePhysica B+C, 1976
- Characterization of low 1/f noise in MOS transistorsIEEE Transactions on Electron Devices, 1971