1/f noise in MODFETs at low drain bias
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (10) , 2250-2253
- https://doi.org/10.1109/16.59916
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Annealing of Implants Reduces Lattice Defects and 1/f NoiseSolid State Phenomena, 1991
- Gate current 1/f noise in GaAs MESFET'sIEEE Transactions on Electron Devices, 1988
- Growth temperature dependence of low-noise MESFET in molecular-beam epitaxyElectronics Letters, 1987
- Annealing of ion-implanted resistors reduces the 1/ f noiseJournal of Applied Physics, 1986
- Direct link between1/fnoise and defects in metal filmsPhysical Review B, 1985
- Parasitic MESFET in (Al, Ga) As/GaAs modulation doped FET's and MODFET characterizationIEEE Transactions on Electron Devices, 1984
- 1/f noise in HEMT-type GaAs FETs at low drain biasSolid-State Electronics, 1983
- Experimental studies on 1/f noiseReports on Progress in Physics, 1981
- 1/f; noise model for MOSTs biased in nonohmic regionSolid-State Electronics, 1980