Annealing of ion-implanted resistors reduces the 1/ f noise

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Abstract
The conductivity fluctuations in 1-MeV, boron-implanted layers in silicon have been investigated at room temperature with the anneal temperature as a parameter. The 1/ f noise parameter α has been calculated from conductance, Hall voltage, and noise experiments. Annealing of the implants causes, in addition to an increase in the number of electrically active impurities, a decrease in the 1/ f noise parameter α by a factor of at least 50. The α value is proportional to eΔE/kTan, with an annealing activation energy ΔE=1.1 eV in a temperature range of 722 K <Tan<1022 K. The annealing affects the quality of the crystal, the scattering mechanism, the temperature dependence of the mobility, and the value of α. The better the crystal, the lower the 1/ f noise parameter α.