High performance 0.25 μm gate-length doped-channel AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
- 22 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 561-564
- https://doi.org/10.1109/iedm.1997.650448
Abstract
Doped-channel heterostructure field effect transistors have been fabricated using Al/sub 0.2/Ga/sub 0.8/N/GaN heterostructures which were grown on p-type SiC substrates by low-pressure metal organic chemical vapor deposition (LP-MOCVD). These devices yielded excellent DC and RF performance with a drain saturation current, extrinsic transconductance, unity current-gain cutoff frequency (f/sub t/), and maximum frequency of oscillation (f/sub max/) of 1.43 A/ mm, 229 mS/mm, 53 GHz, and 58 GHz, respectively, for a 0.25 /spl mu/m gate length.Keywords
This publication has 6 references indexed in Scilit:
- High speed and high power AlGaN/GaN MODFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High transconductance AlGaN/GaN heterostructurefield effect transistors on SiC substratesElectronics Letters, 1997
- Microwave performance of 0.25 µm doped channelGaN/AlGaN heterostructure field effect transistor at elevated temperaturesElectronics Letters, 1997
- AlGaN/GaN HEMTs grown on SiC substratesElectronics Letters, 1997
- High temperature characteristics of AlGaN/GaN modulation doped field-effect transistorsApplied Physics Letters, 1996
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994