High-Frequency Modulation Characteristics of 1.3->tex<$muhboxm$>/tex<InGaAs Quantum Dot Lasers
- 19 February 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 16 (2) , 377-379
- https://doi.org/10.1109/lpt.2003.823088
Abstract
We report results of small-signal modulation characteristics of self-assembled 1.3-μm InGaAs-GaAs quantum dot (QD) lasers at room temperature. The narrow ridge-waveguide lasers were fabricated with multistack InGaAs self-assembled QDs in active region. A high characteristic temperature of T/sub o/=210 K with threshold current density of 200A/cm 2 was obtained. Small-signal modulation bandwidth of f/sub -3 dB/=12 GHz was measured at 300 K with differential gain of dg/dn/spl cong/2.4×10/sup -14/ cm 2 from detailed characteristics. We observed that a limitation of modulation bandwidth in high current injection appeared with gain saturation. This property can direct future high-speed QD laser design.Keywords
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