Unified characterization of two-region gate bias stress in submicrometer p-channel MOSFETs
- 1 May 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (5) , 203-205
- https://doi.org/10.1109/55.55250
Abstract
P-channel MOSFETs stressed at a given drain voltage over the entire range of device saturation, 0 VKeywords
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