Resonant tunneling through a bend in a quantum wire
- 3 February 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (5) , 654-656
- https://doi.org/10.1063/1.106583
Abstract
We study the transmission properties of a two-dimensional L-shaped quantum wire where a double potential barrier is placed at the corner. The localized state at the corner region without the barriers is pushed into the continuum in the presence of the barriers, resulting in resonant tunneling. Through resonant tunneling, reflection at the corner can be eliminated. The transmission is sharply peaked at resonant energies which can be tuned by applying a voltage. We propose that this system can be used as a basic element for connecting quantum devices in a circuit where bending of the connecting wire is necessary.Keywords
This publication has 13 references indexed in Scilit:
- Analysis and modeling of quantum waveguide structures and devicesJournal of Applied Physics, 1991
- Circular bends in electron waveguidesPhysical Review B, 1990
- Quantum Electron DevicesPhysics Today, 1990
- Quantum devicesSuperlattices and Microstructures, 1989
- Theory for a quantum modulated transistorJournal of Applied Physics, 1989
- Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logicIEEE Transactions on Electron Devices, 1989
- Quantum bound states in a classically unbound system of crossed wiresPhysical Review B, 1989
- Quantized conductance of point contacts in a two-dimensional electron gasPhysical Review Letters, 1988
- Physics of resonant tunneling. The one-dimensional double-barrier casePhysical Review B, 1984
- Tunneling in a finite superlatticeApplied Physics Letters, 1973