Impact excitation of the erbium-related 1.54 μm luminescence peak in erbium-doped InP
- 4 February 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (5) , 484-486
- https://doi.org/10.1063/1.104615
Abstract
The Er-related 1.54 μm luminescence peak has been observed in erbium-doped InP layers by impact excitation of Er atoms with energetic carriers accelerated by electric field. Er ions were implanted into n-type InP and Au/Sn ohmic contacts were formed on top of the surface. The Er-related sharp peak at 1.543 μm was observed by only applying dc voltages between the electrodes over the temperature range from 77 to 360 K. Neither band-edge emission nor impurity-related emission were observed, although they were intense in the photoluminescence spectra of the same sample. The fine structure of the 1.54 μm peak was also different from that of photoluminescence. This 1.54 μm emission was related to erbium atoms excited through collisions with energetic electrons accelerated by the electric field.Keywords
This publication has 13 references indexed in Scilit:
- Intra-4f-shell luminescence excitation and quenching mechanism of Yb in InPJournal of Applied Physics, 1989
- 1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxyApplied Physics Letters, 1989
- Intracenter transitions in triply ionized erbium ions diffused into III-V compound semiconductorsApplied Physics Letters, 1989
- Temperature dependence of intra-4f-shell photo- and electroluminescence spectra for erbium-doped GaAsJournal of Applied Physics, 1989
- Erbium-doped GaAs light-emitting diode at 1.54 μmElectronics Letters, 1988
- Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 µmElectronics Letters, 1988
- Excitation and decay mechanisms of the intra-4f luminescence of Yb3+ in epitaxial InP:Yb layersApplied Physics Letters, 1988
- Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaPJournal of Applied Physics, 1986
- Rare earth activated luminescence in InP, GaP and GaAsJournal of Crystal Growth, 1983
- Hot-Electron Impact Excitation of Tb3+ Luminescence in ZnS: Tb3+ Thin FilmsJournal of Applied Physics, 1972