1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy
- 13 November 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (20) , 2105-2107
- https://doi.org/10.1063/1.102077
Abstract
GaAs and GaAlAs double-heterostructure light emitting diodes doped with erbium have been grown by molecular beam epitaxy. Both devices exhibit 1.54 μm electroluminescence (EL) at 300 K but the spectra obtained for GaAlAs:Er are much narrower than those of GaAs:Er. 1.54 μm EL has been detected for injection currents as low as 0.8 mA/cm2 and an external quantum efficiency of 10−6 has been found at 300 K. Preliminary data concerning the energy transfer from the injected carriers to the rare earth are provided.Keywords
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