The “barrier mode” behaviour of a junction FET at low drain currents
- 30 November 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (11) , 1013-1017
- https://doi.org/10.1016/0038-1101(75)90120-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Subthreshold design considerations for insulated gate field-effect transistorsIEEE Journal of Solid-State Circuits, 1974
- Low level currents in insulated gate field effect transistorsSolid-State Electronics, 1972
- An analysis of current saturation mechanism of junction field-effect transistorsIEEE Transactions on Electron Devices, 1970
- Limitation of properties of field-effect transistorsProceedings of the IEEE, 1966