Quantum well states in a metal-semiconductor system: CoSi2/Si(111)
- 1 January 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 184 (1-2) , 365-371
- https://doi.org/10.1016/0040-6090(90)90433-e
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Quantized hole states detected by photoemission in ultrathin epitaxial CoSi2films on Si(111)Physical Review B, 1989
- Electronic states of semiconductor/metal/semiconductor quantum well structuresSuperlattices and Microstructures, 1988
- Quantum-Well States in a Metallic System: Ag on Au(111)Physical Review Letters, 1988
- Energy-band structure ofepitaxially grown on Si(111)Physical Review B, 1988
- Determination of the atomic structure of the epitaxial:Si(111) interface using high-resolution Rutherford backscatteringPhysical Review B, 1988
- A bird's-eye view on the evolution of semiconductor superlattices and quantum wellsIEEE Journal of Quantum Electronics, 1986
- High-temperature nucleation and silicide formation at the Co/Si(111)-7×7 interface: A structural investigationPhysical Review B, 1986
- Surface structure of epitaxialcrystals grown on Si(111)Physical Review B, 1986
- Observation of film states and surface-state precursors for Ag films on Si(111)Physical Review B, 1986
- Transistor effect in monolithic Si/CoSi 2 /Si epitaxial structuresElectronics Letters, 1984